EXCITON LOCALIZATION IN InGaN/GaN QUANTUM WELLS
نویسندگان
چکیده
Time-resolved cathodoluminescence (CL) techniques have been employed to examine the optical properties and kinetics of carrier relaxation in a InGaN/GaN single quantum well (QW) sample. CL images of the QW sample revealed a spotty cellular pattern indicative of local In compositional variations, which induce local potential fluctuations and result in a strong lateral excitonic localization at InN-rich regions in the InGaN QW layer.
منابع مشابه
Correlating exciton localization with compositional fluctuations in InGaN/GaN quantum wells grown on GaN planar surfaces and facets of GaN triangular prisms
We have used spatially and temporally resolved cathodoluminescence CL to study the carrier recombination dynamics of InGaN quantum wells QWs grown on 0001 -oriented planar GaN and 11̄01 -oriented facets of GaN triangular prisms prepared by lateral epitaxial overgrowth in a metal-organic chemical vapor deposition system. The effects of In migration during growth on the resulting QW thickness and ...
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